2SC1008 G(200-400)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR (NPN) TO – 92 FEATURES z General Purpose Switching and Amplification 1. EMITTER 2. BASE 3. COLLECTOR  Equivalent Circuit "(&   z     !"#$%  %  %  & )% %!*% $  & '''"  1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity    1000pcs/Bag    2000pcs/Box  MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Collector Power Dissipation 800 mW R JA Thermal Resistance From Junction To Ambient 156  /W Junction Temperature 150  Storage Temperature -55~+150  Tj Tstg          Ta =25  unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 8 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=2V, IC=50mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA Base-emitter saturation voltage VBE (sat) IC=500mA,IB=50mA Collector output capacitance Cob 0.4 1.1 8 VCB=10V,IC=0, f=1MHz fT Transition frequency 400 VCE=10V,IC= 50mA V V pF 30 MHz CLASSIFICATION OF hFE RANK R O Y G RANGE 40-80 70-140 120-240 200-400 www.cj-elec.com   Typical Characteristics Static Characteristic COMMON EMITTER Ta=25ć 0.20 —— IC 900uA 700uA 0.15 600uA 500uA 0.10 Ta=100ć hFE 800uA DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 1mA IC (A) 0.25 400uA 300uA 100 Ta=25ć 200uA 0.05 IB=100uA 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCEsat —— COLLECTOR CURRENT IC ;=10 1 10 COLLECTOR CURRENT —— VBE 1000 Cob/ Cib 100 IC 700 (mA) —— VCB/ VEB f=1MHz IE=0/IC=0 Ta=25ć T= a 10 0ć 10 1 0.1 200 400 600 800 BASE-EMITER VOLTAGE PC 1200 Cib 100 C (pF) 100 T= a 25 ć (mA) Ta=100ć 400 (mA) COMMON EMITTER VCE=2V IC COLLCETOR CURRENT IC Ta=25ć 600 0 0.1 700 100 (mA) IC —— 800 700 100 IC 200 ;=10 10 10 VBEsat 1000 Ta=25ć 1 1 COLLECTOR CURRENT (V) IC 100 700 10 0.1 10 Ta=100ć 10 0.1 COLLECTOR POWER DISSIPATION PC (mW) VCE 9 CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 8 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0.00 COMMON EMITTER VCE=2V —— V BE 1000 10 1 0.1 Cob 1 REVERSE VOLTAGE (mV) 10 V 30 (V) Ta 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (ć )  <  %&'()#*+%,!  A A1 b c D D1 E e e1 L  h !" #$     3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4.? 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 %&'(,++!-)-,!  @  %&'(7DSHDQG5HHO ZZZFMHOHFFRP?